Our country’s scientific research team has made important progress in two-dimensional high-performance floating gate transistor memory

Our country’s scientific research team has made important progress in two-dimensional high-performance floating gate transistor memory

Xinhua News Agency reported on September 18 that according to Huazhong University of Science and Technology, the team of Zhai Tianyou, a professor at the National Key Laboratory of Material Forming and Mold Technology, has made important progress in two-dimensional high-performance floating gate transistor memory and developed a device with edge contact characteristics. Compared with the performance of existing commercial flash memory devices, the new two-dimensional floating gate transistor device has improved key performances such as erasing and writing speed and cycle life, providing new ideas for the development of high-performance, high-density and large-capacity memory devices.